? 2008 ixys corporation, all rights reserved ds99583b(12/09) genx3 tm 600v igbts IXGK320N60A3 ixgx320n60a3 v ces = 600v i c25 = 320a v ce(sat) 1.25v ultra-low vsat pt igbts for up to 5khz switching symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 320 a i c110 t c = 110c 210 a i lrms terminal current limit 160 a i cm t c = 25c, 1ms 700 a ssoa v ge = 15v, t vj = 125c, r g = 1 i cm = 320 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 1000 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque ( ixgk ) 1.13/10 nm/lb.in. f c mounting force ( ixgx ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g g = gate e = emitter c = collector tab = collector plus247 tm (ixgx) g c e tab to-264 (ixgk) e g c e tab features z optimized for low conduction losses z high avalanche capability z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1ma, v ge = 0v 600 v v ge(th) i c = 4ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 150 a t j = 125c 1.5 ma i ges v ce = 0v, v ge = 20v 400 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.05 1.25 v i c = 320a 1.46 v
ixys reserves the right to change limits, test conditions, and dimensions. IXGK320N60A3 ixgx320n60a3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) plus247 tm (ixgx) outline to-264 (ixgk) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 75 125 s c ies 18 nf c oes v ce = 25v, v ge = 0v, f = 1 mhz 985 pf c res 150 pf q g(on) 560 nc q ge i c = 80a, v ge = 15v, v ce = 0.5 ? v ces 94 nc q gc 195 nc t d(on) 63 ns t r 68 ns t d(off) 290 ns t f 740 ns t d(on) 62 ns t r 77 ns t d(off) 330 ns t f 1540 ns r thjc 0.125 c/w r thck 0.15 c/w resistive load, t j = 25c i c = 80a, v ge = 15v v ce = 400v, r g = 1 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive load, t j = 125c i c = 80a, v ge = 15v v ce = 400v, r g = 1
? 2008 ixys corporation, all rights reserved fig. 1. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 2. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 3. dependence of v ce(sat) on junction temperature 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 160a i c = 80a fig. 4. collector-to-emitter voltage vs. gate-to-emitter voltage 0.8 1.2 1.6 2.0 2.4 2.8 3.2 56789101112131415 v ge - volts v ce - volts i c = 320a 160a 80a t j = 25oc fig. 5. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc fig. 6. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc IXGK320N60A3 ixgx320n60a3
ixys reserves the right to change limits, test conditions, and dimensions. IXGK320N60A3 ixgx320n60a3 fig. 7. gate charge 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 q g - nanocoulombs v ge - volts v ce = 300v i c = 80a i g = 10ma fig. 9. reverse-bias safe operating area 0 50 100 150 200 250 300 350 100 150 200 250 300 350 400 450 500 550 600 v ce - volts i c - amperes t j = 125oc r g = 1 ? dv / dt < 10v / ns fig. 8. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 10. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixys ref: g_320n60a3(96)7-03-08-a fig. 12. resistive turn-on rise time vs. collector current 50 70 90 110 130 150 170 80 100 120 140 160 180 200 220 240 260 280 300 320 i c - amperes t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 13. resistive turn-on switching times vs. gate resistance 50 100 150 200 250 300 350 400 450 12345678910 r g - ohms t r - nanoseconds 56 60 64 68 72 76 80 84 88 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 320a, 160a, 80a i c = 80a fig. 14. resistive turn-off switching times vs. junction temperature 500 700 900 1100 1300 1500 1700 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 140 180 220 260 300 340 380 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 400v i c = 320a i c = 80a i c = 160a fig. 15. resistive turn-off switching times vs. collector current 200 400 600 800 1000 1200 1400 1600 80 120 160 200 240 280 320 i c - amperes t f - nanoseconds 175 200 225 250 275 300 325 350 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 16. resistive turn-off switching times vs. gate resistance 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 12345678910 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 900 1000 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 80a i c = 320a i c = 160a fig.11. resistive turn-on rise time vs. junction temperature 50 70 90 110 130 150 170 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v ge = 15v v ce = 400v i c = 320a i c = 160a i c = 80a IXGK320N60A3 ixgx320n60a3
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